SMD Silicon Phototransistor
OP520, OP521
Relative Response vs.
Angular Position
Relative On-State Collector Current
vs. Collector-Emitter Voltage
100%
80%
1.40
1.20
6 mW/cm 2
5 mW/cm 2
1.00
4 mW/cm 2
60%
40%
0.80
0.60
3 mW/cm 2
2 mW/cm 2
0.40
20%
0%
0.20
1 mW/cm 2
-90
-60
-30
0
30
60
90
0
0.1
0.2
0.3
0.4
0.5
Angular Position (Degrees)
Collector-Emitter Voltage (V)
1000
Collector-Emitter Dark Current
vs. Temperature
Conditions: E e = 0 mW/cm 2
100%
Relative Response vs. Wavelength
V CE = 10V
80%
100
60%
10
40%
1
20%
OP521
OP520
0
0%
-25
0
25
50
75
100
400
500
600
700
800
900
1000 1100
Temperature—( ° C)
Wavelength (nm)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue 1.3 05/10
Page 3 of 3
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相关代理商/技术参数
OP521 制造商:TT Electronics / OPTEK Technology 功能描述:Transistor
OP521DA 功能描述:光电晶体管 Photo Darlington RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP522 功能描述:光电晶体管 Phototrans Clear RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP522 制造商:TT Electronics / OPTEK Technology 功能描述:Transistor
OP524,005 功能描述:MOSFET OP524/UNCASED/FOIL// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
OP525 功能描述:光电晶体管 Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP525DA 功能描述:光电晶体管 Photo Darlington RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP525F 功能描述:光电晶体管 Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1